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Silicon Phototransistor and Photo Darlington
in Miniature 0805 SMD Package
OP500, OP501, OP500DA, OP501DA
OP500DA, OP501DA
160%
130%
Relative On-State Collector Current
vs. Irradiance—Ee (mW/cm 2 )
Normalized at E e = 1mW/cm 2
Conditions: V CE = 5V,
λ = 935nm, T A = 25 °C
140%
120%
100%
80%
60%
40%
Relative On-State Collector Current-IC (mA)
vs. Temperature-T A
140%
Normalized at T A = 25°C .
Conditions: V CE = 5V,
120%
110%
100%
90%
80%
70%
0
0.50
1.0
1.5
2.0
-25
0
25
50
75
100
Irradiance- Ee(mW/cm )
2
Temperature—(°C)
OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible.
OPTEK Technology Inc. — 1645 Wallace Drive, Carrollton, Texas 75006
Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 323-2396 sensors@optekinc.com www.optekinc.com
Issue A.4 02/09
Page 5 of 5
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相关PDF资料
OP505C
PHOTOTRANSISTOR SILICON NPN T-1
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